Micro-fabricated e-B2itTM Module Substrate with Innovative
SAP (Semi-Additive Patterning) Technology
Special Buildup Substrate Optimizing Passive Device Embedding and Applicable to Fine Pitch Circuit for e-B2it Module Substrate
Features
Fine pitch capable of 40um pitch (Line/Space=20/20).
Micro-fabricated e-B2it module substrate applicable to 40um pitch with semi-additive patterning by deeply cultivated photolithography technology.
Excellent peel strength against HAST environmental test.
Enable to achieve stable peel strength in micro-fabricated circuit, after 96hrs HAST.
Stable isolation resistance against demanding HAST test.
Enable to achieve good isolation resistance between fine patterns by innovation
of metalization process without catalytic metals.
Proto-type specifications
Available both in C4 and Au stud bump interconnection with each compliant surface finish
ENIG or Ni/Pd/Au finish is recommended for C4 and Au stud bump interconnection,
SAC305 solder pre-coat treatment is applicable.
Compatible with wire bond die stacking technology with high-Tg dielectric material
Ni/Pd/Au finish is recommended for wire bonding, Au electro-plating is applicable.
Capable to embed various passive components with Sn finished terminal,
chip resistors, chip capacitors and chip inductors.
0.22mm to 0.33mm height of passive components can be mixed.
General performances
All of standard reliability test are passed with flip-chip IC and embedded passive components.
Application
Digital baseband modules for cellular telephone, smart-phone with high-speed switching devices. Embedded CPU Modules with multiple-power and low voltage supply system. RF Modules with various band pass filters. Substitution purpose for various LTCC substrate.
Electronic Device Operations 
Fine pitch capable of 40um pitch (Line/Space=20/20).
