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| MEMS |
Dai Nippon Printing (DNP) has provided MEMS foundry service since 2001.
Features of DNP MEMS foundry service are :
- DNP can support comprehensive foundry service, including design, trial production and mass production.
- We stand in neutral position for all customers.
- Manufacturing equipment is focused on MEMS production, which is available for 6&8-inch wafers.
- Requests of single and partial process are acceptable.
- Our foundry service is able to provide photo-mask in collaboration with photo-mask manufacturing section in DNP.
- We prepare for wide varieties of deep reactive ion etching (Deep-RIE) recipe.
- It is available for electro Cu plating for TSV with high aspect ratio.
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| Technologies |
| Equipment |
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deposition
・sputter (DC、RF)
・EB-evaporation
・LP-CVD
・PE-CVD
・MO-CVD
furnace
・thermal oxidization furnace
(wet、pyro、dry)
・thermal diffusion furnace
・anneal furnace
dry-etching
・Deep-RIE
・RIE (ICP、CCP)
・asher
lithography
・spin / spray coater
・both sides alignment exposure
・i -ray stepper exposure
・developer (paddle、spray)
wet-etching
・Si-crystal anisotropic etcher
・metal etcher
・organic film etcher
・thermal phosphorus acid etcher |
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wet process
・electro-plate
・wafer cleaner
・resist remover
・fluoride carbon film remover
post process
・anodic bonder
・dicer
measuring
・CD-SEM、review-SEM
・microscope (optical, laser, both sides)
・3D laser measuring machine
・surface profiler
・spectrometric film thickness measurement system
・total X-ray fluorescence spectrometer
・ellipsometer
・wafer-bow measurement system
・spreading resistance profiler
・prober
・surface inspection system
design&analysis
・MEMS design / analysis soft
・electromagnetic field simulator |
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| Process example |
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| process |
objects |
notes |
| Sputter |
Al, Al-Si, Al-Nd, Cr, Cu, Au
Ti, TiN, SiO2 |
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| PE-CVD |
stress controlled TEOS-SiO2 |
high thickness deposisiton ～20mm |
| stress controlled SiN |
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| a-Si |
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| LP-CVD |
SiO2 |
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| stress controlled SiN |
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| poly-Si |
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| MO-CVD |
Cu, TiN |
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| Electro-Plate |
Au, Cu, Ni, Rh |
Cu plating adaptable to through Si via |
| Impurity Diffusion |
low - high doped B, low doped P |
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| RIE |
Si, SiO2, SiN |
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| Deep-RIE |
Si deep etching |
aspect ratio ～60 (resist mask) |
| Wet Etching |
Si crystal anisotropic etch |
KOH, TMAH |
| Si isotropic etch |
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Al, Al-Si, Al-Nd, Cr, Cu, Au, Ti
TiN, SiO2, SiN |
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